IPB70N10S3-12 ipi70n10s3-12, ipp70n10s3-12 optimos ? -t power-transistor features ? n-channel - enhancement mode ? automotive aec q101 qualified ? msl1 up to 260c peak reflow ? 175c operating temperature ? green product (rohs compliant) ? 100% avalanche tested maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c, v gs =10 v 70 a t c =100 c, v gs =10 v 2) 48 pulsed drain current 1) i d,pulse t c =25 c 280 avalanche energy, single pulse 1) e as i d =35a 410 mj avalanche current, single pulse i as 70 a gate source voltage v gs 20 v power dissipation p tot t c =25 c 125 w operating and storage temperature t j , t stg -55 ... +175 c iec climatic category; din iec 68-1 55/175/56 value v ds 100 v r ds(on),max (smd version) 11.3 m ? i d 70 a product summary pg-to220-3-1 pg-to262-3-1 pg-to263-3-2 type package marking IPB70N10S3-12 pg-to263-3-2 3n1012 ipi70n10s3-12 pg-to262-3-1 3n1012 ipp70n10s3-12 pg-to220-3-1 3n1012 rev. 1.0 page 1 2008-02-12
IPB70N10S3-12 ipi70n10s3-12, ipp70n10s3-12 parameter symbol conditions unit min. typ. max. thermal characteristics 1) thermal resistance, junction - case r thjc - - 1.2 k/w thermal resistance, junction - ambient, leaded r thja --62 smd version, device on pcb r thja minimal footprint - - 62 6 cm 2 cooling area 2) --40 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d = 1 ma 100 - - v gate threshold voltage v gs(th) v ds = v gs , i d =83a 2.0 3.0 4.0 zero gate voltage drain current i dss v ds =80 v, v gs =0 v, t j =25 c - 0.01 1 a v ds =80 v, v gs =0 v, t j =125 c 2) - 1 100 gate-source leakage current i gss v gs =20v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =10v, i d =70a - 9.7 11.6 m ? v gs =10v, i d =70a, smd version - 9.4 11.3 values rev. 1.0 page 2 2008-02-12
IPB70N10S3-12 ipi70n10s3-12, ipp70n10s3-12 parameter symbol conditions unit min. typ. max. d y namic characteristics 1) input capacitance c iss - 3350 4355 pf output capacitance c oss - 940 1222 reverse transfer capacitance c rss - 105 158 turn-on delay time t d(on) -17-ns rise time t r -8- turn-off delay time t d(off) -25- fall time t f -8- gate char g e characteristics 1) gate to source charge q gs -1723nc gate to drain charge q gd -1219 gate charge total q g -5166 gate plateau voltage v plateau - 5.5 - v reverse diode diode continous forward current 1) i s - - 70 a diode pulse current 1) i s,pulse - - 280 diode forward voltage v sd v gs =0 v, i f =70 a, t j =25 c 0.6 1 1.2 v reverse recovery time 1) t rr v r =50v, i f = i s , d i f /d t =100a/s - 100 - ns reverse recovery charge 1) q rr - 265 - nc 1) defined by design. not subject to production test. 2) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. t c =25c values v gs =0v, v ds =25v, f =1mhz v dd =20 v, v gs =10 v, i d =70 a, r g =3.5 ? v dd =80 v, i d =70 a, v gs =0 to 10 v rev. 1.0 page 3 2008-02-12
IPB70N10S3-12 ipi70n10s3-12, ipp70n10s3-12 1 power dissipation 2 drain current p tot = f( t c ); v gs 6 v i d = f( t c ); v gs 6 v; smd 3 safe operating area 4 max. transient thermal impedance i d = f( v ds ); t c = 25 c; d = 0; smd z thjc = f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 1 10 100 1000 0.1 1 10 100 v ds [v] i d [a] single pulse 0.01 0.05 0.1 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 10 1 10 0 10 -1 10 -2 10 -3 t p [s] z thjc [k/w] 0 25 50 75 100 125 150 0 50 100 150 200 t c [c] p tot [w] 0 20 40 60 80 0 50 100 150 200 t c [c] i d [a] rev. 1.0 page 4 2008-02-12
IPB70N10S3-12 ipi70n10s3-12, ipp70n10s3-12 5 typ. output characteristics 6 typ. drain-source on-state resistance i d = f( v ds ); t j = 25 c; smd r ds(on) = f( i d ); t j = 25 c; smd parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. drain-source on-state resistance i d = f( v gs ); v ds = 6v r ds(on) = f( t j ); i d = 70 a; v gs = 10 v; smd parameter: t j 5 7 9 11 13 15 17 19 21 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ? ] 5 v 5.5 v 6 v 6.5 v 7 v 10 v 0 40 80 120 160 200 240 280 320 360 400 012345 v ds [v] i d [a] 5.5 v 6 v 6.5 v 7 v 10 v 8 10 12 14 16 18 20 0 20 40 60 80 100 120 i d [a] r ds(on) [m ? ] -55 c 25 c 175 c 0 50 100 150 200 250 34567 v gs [v] i d [a] rev. 1.0 page 5 2008-02-12
IPB70N10S3-12 ipi70n10s3-12, ipp70n10s3-12 9 typ. gate threshold voltage 10 typ. capacitances v gs(th) = f( t j ); v gs = v ds c = f( v ds ); v gs = 0 v; f = 1 mhz parameter: i d 11 typical forward diode characteristicis 12 typ. avalanche characteristics if = f(v sd ) i a s = f( t av ) parameter: t j parameter: t j(start) 25 c 175 c 10 3 10 2 10 1 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd [v] i f [a] 80 a 400 a 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] ciss coss crss 10 2 10 3 10 4 0 5 10 15 20 25 30 v ds [v] c [pf] 10 1 25 c 100 c 150 c 1 10 100 0.1 1 10 100 1000 t av [s] i av [a] 25 c 175 c 10 3 10 2 10 1 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd [v] i f [a] rev. 1.0 page 6 2008-02-12
IPB70N10S3-12 ipi70n10s3-12, ipp70n10s3-12 13 typical avalanche energy 14 typ. drain-source breakdown voltage e as = f( t j ) v br(dss) = f( t j ); i d = 1 ma parameter: i d 15 typ. gate charge 16 gate charge waveforms v gs = f( q gate ); i d = 70 a pulsed parameter: v dd v gs q gate v gs(th) q g(th) q gs q gd q sw q g 90 95 100 105 110 115 -55 -15 25 65 105 145 t j [c] v br(dss) [v] 20 v 80 v 0 1 2 3 4 5 6 7 8 9 10 0 1020304050 q gate [nc] v gs [v] 70 a 35 a 17.5 a 0 200 400 600 800 1000 25 75 125 175 t j [c] e as [mj] rev. 1.0 page 7 2008-02-12
IPB70N10S3-12 ipi70n10s3-12, ipp70n10s3-12 published by infineon technologies ag 81726 munich, germany ? infineon technologies ag 2007 all rights reserved. legal disclaime r the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non ? infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 1.0 page 8 2008-02-12
IPB70N10S3-12 ipi70n10s3-12, ipp70n10s3-12 revision history version changes date rev. 1.0 page 9 2008-02-12
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